BFP405F NPN三极管 10V 12mA 25GHz 50~150 SOT-543/TSFP-4 marking/标记 AL
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 10V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4.5V |
集电极连续输出电流ICCollector Current(IC) | 12mA |
截止频率fTTranstion Frequency(fT) | 25GHz |
直流电流增益hFEDC Current Gain(hFE) | 50~150 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | |
耗散功率PcPower Dissipation | 55mW |
Description & Applications | NPN Silicon RF Transistor For low current applications Smallest Package 1.4 x 0.8 x 0.59mm Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms= 23 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line |
描述与应用 | NPN硅RF晶体管 对于低电流应用 最小封装为1.4×0.8×0.59毫米 噪声系数F =1.25 dB,*(在1.8 GHz时) 杰出GMS=23在1.8 GHz 过渡频率fT= 25 GHz的 黄金金属的高可靠性 SIEGET25 GHz的FT - 线路 |
规格书PDF |