IRF5801TRPBF N沟道MOSFET 600mA/0.6A SOT-163/TSOP-6 marking/标记 低漏源导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 600mA/0.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.2Ω@ VGS = 10V, ID =360mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 3~5.5V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | Applications High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, Fully Characterized Avalanche Voltage and Current |
| 描述与应用 | 应用 高频DC-DC转换器 优点 低栅极漏极电荷降低开关损耗 电容的全部特性，包括有效的COSS为了简化设计， 充分界定雪崩电压和电流 |
| 规格书PDF |
