SIR164DP-T1-GE3 N沟道MOSFET 30V 50A PowerPAKSO-8 marking/标记 R164 低输入电容/高速开关
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 50A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.5mΩ@ VGS = 10V, ID = 15A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2~2.5V |
| 耗散功率Pd Power Dissipation | 6.9W |
| Description & Applications | N-ChAPPLICATIONS • DC/DC • Notebook CPU Coreannel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • New MOSFET Technology Optimized for Ringing Reduction in Switching Application • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC • Notebook CPU Core |
| 描述与应用 | N-ChAPPLICATIONS的 •DC / DC •笔记本电脑CPU Coreannel的30-V（D-S）的MOSFET 特点 •根据IEC 61249-2-21的无卤素 定义 •第三代TrenchFET®功率MOSFET •新的MOSFET技术优化 振铃减少开关应用 •100％的Rg和UIS测试 •符合RoHS指令2002/95/EC 应用 •DC / DC •笔记本CPU核心 |
| 规格书PDF |
