ME2N7002W-G N沟道MOSFET 60V 300mA/0.3A SOT-23/SC-59 marking/标记 72 超低导通电阻/逻辑电平栅极驱动
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.5Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design |
| 描述与应用 | N沟道MOSFET 概述 的ME2N7002E是N沟道增强型场效应 晶体管都采用高密度DMOS技术。 这些产品旨在最大限度地减少通态电阻 同时提供坚固，可靠，快速的开关性能。他们 可以用在大多数应用中，要求到300mA直流，并能 提供脉冲电流高达1.2A。这些产品特别 适用于低电压，低电流应用，如小型伺服 马达控制，功率MOSFET的栅极驱动器，以及其他开关应用。 超高密度电池设计极 低RDS（ON） 卓越的导通电阻和最大 DC电流能力 SOT-23封装设计 |
| 规格书PDF |
