FS10ASJ-06 N沟道MOSFET 60V 10A TO-252/D-PAK marking/标记 FS10J 低栅极电荷/高速开关/极低的RDS
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 10A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.07Ω/Ohm @5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.0V |
| 耗散功率Pd Power Dissipation | 3W |
| Description & Applications | |
| 描述与应用 |
| 规格书PDF |
