TPCF8001 N沟道MOSFET 30V 7A vs-8 marking/标记 F2A 高速开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.023Ω/Ohm @3.5A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3-2.5V |
| 耗散功率Pd Power Dissipation | 1.5W |
| Description & Applications | Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8 S (typ.) • Low leakage current: IDSS = 10 μA (max.) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) |
| 描述与应用 | 笔记本电脑应用 便携式设备的应用 •低漏源导通电阻RDSON）= 19mΩ（典型值） •高正向转移导纳：| YFS| =8 S（典型值） •低漏电流IDSS=10μ（最大值）（VDS=30 V） •增强模式：VTH =1.3到2.5 V （VDS=10 V，ID=1毫安） |
| 规格书PDF |
