CHM2304GP N沟道结型场效应管 30v 8~80mA SOT-23 marking/标记 041Q 低频率，低噪声
| 最大源漏极电压VdsDrain-Source Voltage | 30v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 8~80ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | 0.8~4v |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | •N-Channel Low-Frequency Low-Noise SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 Ampere |
| 描述与应用 | •N沟道低频率的低噪声 表面贴装 N沟道增强型场效应晶体管 电压30伏特电流2.8安培 |
| 规格书PDF |
