2SD2459GSL NPN三极管 150V 1A 90MHz 170~340 110mV/0.11V SOT-89/SC-62 marking/标记 2ES 低频功率放大
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 90MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 170~340 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 110mV/0.11V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | Silicon NPN epitaxial planer type For low-frequency power amplification Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | NPN硅外延平面型 对于低频功率放大 特点 高集电极发射极电压VCEO。 大集电极功耗PC。 迷你功率型封装，通过自动插入带包装盒包装。 |
| 规格书PDF |
