FDS6692 N沟道MOSFET 30V 12A 8-SOIC marking/标记 FDS6692 低漏源导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
| 最大漏极电流Id Drain Current | 12A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 14.5mΩ@ VGS = 4.5V, ID =11A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1~3V |
| 耗散功率Pd Power Dissipation | 2.5W |
| Description & Applications | 30V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter Features • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability |
| 描述与应用 | 30V N沟道功率沟槽MOSFET 概述 此N沟道MOSFET已专门设计，以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。它已被优化低栅极电荷，低RDS（ON）和快速开关速度。 应用 •DC/ DC转换器 特点 •低栅极电荷 •高性能沟道技术极低的RDS（ON） •高功率和电流处理能力 |
| 规格书PDF |
