BSV52 NPN三极管 20V 100mA/0.1A 500MHz 40~120 400mV/0.4V SOT-23/SC-59 marking/标记 B2 开关晶体管
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
截止频率fTTranstion Frequency(fT) | 400MHz |
直流电流增益hFEDC Current Gain(hFE) | 40~120 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率PcPower Dissipation | 225mW/0.225W |
Description & Applications | NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. |
描述与应用 | NPN开关晶体管 该设备是专为高速饱和开关 集电极电流10 mA至100 mA的。 |
规格书PDF |