SST176-T1 P沟道结型场效应管 30 V －2.0~－35.0mA SOT-23 marking/标记 S6 高速开关/漏极和源极连接的互换性/在零电压/低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | 30 V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | 30 V |
| 漏极电流(Vgs=0V)IDSSDrain Current | －2.0~－35.0mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | 1.0~4.0V |
| 耗散功率PdPower Dissipation | 350mW/0.35W |
| Description & Applications | P-Channel JFET SST176 Series FEATURE Fast Switching—tON: 25 ns Low Leakage: –10 pA Low Capacitance: 5 pF Low Insertion Loss BENEFITS Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering APPLICATIONS Analog Switches Sample-and-Hold Normally “On” Switches Current Limiters |
| 描述与应用 | P沟道JFET SST176系列 特点 快速开关：25纳秒 低漏：-10 PA 低电容：5 PF 低插入损耗 优点 误差电压低 高速模拟电路性能 良好的频率响应 无需额外的缓冲 应用 模拟开关 采样和保持 通常情况下开关是“开”状态 电流限制器 |
| 规格书PDF |
