LP2301LT1G P沟道MOS场效应管 -20V -2.3A 0.069ohm SOT-23 marking/标记 1 简单驱动要求 小型封装
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -2.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.069Ω @-2.8A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | |
| 耗散功率PdPower Dissipation | 900mW/0.9W |
| Description & Applications | Simple Drive Requirement Small Package Outline Surface Mount Device Pb-Free package is available |
| 描述与应用 | 简单的驱动要求 小封装 表面贴装设备 无铅封装 |
| 规格书PDF |
