L2N7002LT1G N沟道MOSFET 60V 115mA/0.115A SOT-23/SC-59 marking/标记 702 高频DC/DC转换器/良好的热电阻
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 60V |
| 最大漏极电流Id Drain Current | 115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.007Ω/Ohm @10mA,2.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS We declare that the material of product are Halogen Free and compliance with RoHS requirements. ESD Protected:1000V |
| 描述与应用 | 半导体技术数据 超高速开关应用 模拟开关应用 对产品材料无卤 符合RoHS要求。 ESD保护：1000V |
| 规格书PDF |
