SI8413DB-T1-E1 P沟道MOS场效应管 -20V -6.5A 0.0393ohm Vth:-0.6V-1.4V 2X2 4-MFP marking/标记 8413
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -6.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.0393Ω @-1A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.6V-1.4V |
| 耗散功率PdPower Dissipation | 2.77W |
| Description & Applications | FEATURES • TrenchFET Power MOSFET • MICRO FOOT Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area |
| 描述与应用 | 芯片级封装 减少占位面积简介（0.62毫米） 每占位面积导通电阻 |
| 规格书PDF |
