2SK3582CT-B N沟道结型场效应管 20v 0.08~0.3mA CST3 marking/标记 97
| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.08~0.3ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.1~-0.65v |
| 耗散功率PdPower Dissipation | 80mw |
| Description & Applications | •Silicon N-Channel Junction FET Electret condenser microphone - Ideal for Mini Microphone for CSP package of 1.0 × 0.6 × 0.38 mmt • The excellent reduced voltage characteristic · We have excellent transient response |
| 描述与应用 | •硅N沟道结型场效应管 驻极体电容式麦克风 - 非常适于微型麦克风CSP封装的1.0×0.6×0.38亿吨 •优秀的降低电压特性 ·出色的瞬态响应 |
| 规格书PDF |
