2SK0664/2SK664 MOSFET N沟道场效应管 Vds= 50v Id=100MA/0.1A 代码/MARKING 3N
最大源漏极电压Vds Drain-Source Voltage |
50V |
最大栅源极电压Vgs(±) Gate-Source Voltage |
8V |
最大漏极电流Id Drain Current |
100MA/0.1A |
源漏极导通电阻Rds Drain-Source On-State |
50Ω |
开启电压Vgs(th) Gate-Source Threshold Voltage |
|
耗散功率P Power dissipation |
150MW/0.15W |
描述与应用 Description & Applications |
规格书PDF |