SI2305ADS-T1-GE3 P沟道MOS场效应管 -8V -5.4A 0.032ohm SOT-23 marking/标记 5AA
| 最大源漏极电压VdsDrain-Source Voltage | -8V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -5.4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.032Ω @-4.1A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45V-0.8V |
| 耗散功率PdPower Dissipation | 1.7W |
| Description & Applications | FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
| 描述与应用 | Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
| 规格书PDF |
