BSS138LT1G N沟道MOSFET 50V 200mA/0.2A SOT-23/SC-59 marking/标记 J1 增强模式逻辑电平
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 200mA/0.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.5V |
| 耗散功率Pd Power Dissipation | 225mW/0.225W |
| Description & Applications | Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low Threshold Voltage (VGS(th) :0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications •Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Packages are Available |
| 描述与应用 | 功率MOSFET 200毫安，50 V N沟道SOT-23 典型的应用是DC-DC转换器，电源管理 便携式和电池供电产品，如电脑，打印机， PCMCIA卡，手机和无绳电话。 低阈值电压（VGS（TH） ：0.5 V-1.5 V）使得它非常适合 低电压应用 •微型SOT-23表面贴装封装节省电路板间 •无铅包可用 |
| 规格书PDF |
