SI1413EDH P沟道MOS场效应管 -20V -2.9A 0.095ohm SOT-363 marking/标记 BAD 功率MOSFET 3000VESD保护
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -2.9A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.095Ω @-2.9A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45V |
| 耗散功率PdPower Dissipation | 1.56W |
| Description & Applications | TrenchFET Power MOSFETS: 1.8-V Rated ESD Protected: 3000 V Thermally Enhanced SC-70 Package |
| 描述与应用 | 功率MOSFET：1.8 V额定 ESD保护：3000 V 耐热增强型SC-70封装 |
| 规格书PDF |
