TPCF8105 P沟道场效应管 -20V -6A SOT23-8 代码 F3E 增强型 低漏电流 低漏源电阻
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -6A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.024Ω @-3A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.2V |
| 耗散功率PdPower Dissipation | 2.5W |
| Description & Applications | Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON)= 24 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) |
| 描述与应用 | 由于占地面积小，小而薄的封装 低漏源电阻RDS（ON）= 24m（典型值）（VGS=-4.5 V） 低漏电流：IDSS= -10μA（最大）（VDS=-20 V） 增强模式：VTH =-0.5〜-1.2 V（VDS=-10 V，ID=-0.5毫安） |
| 规格书PDF |
