TPCF8002 N 沟道场效应管 30V 7A SOT23-8 代码 F2B 低漏源导通电阻 增强模式 低漏电流
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | ±20V |
| 最大漏极电流Id Drain Current | 7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 16mΩ~21mΩ |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3V~2.5V VDS = 10 V, ID = 1mA |
| 耗散功率Pd Power Dissipation | 2.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS Ⅳ) . * Notebook PC Applications * Portable Equipment Applications * Small footprint due to a small and thin package * Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) * Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) * Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS型（U-MOSⅣ）。 *笔记本电脑应用 *便携式设备的应用 *由于占地面积小，小而薄的封装 *低漏源导通电阻RDS（ON）= 16mΩ（典型值） *低漏电流IDSS= 10μA（最大）（VDS=30 V） *增强模式：VTH =1.3到2.5 V（VDS=10V，ID=1毫安） |
| 规格书PDF |
