SIA411DJ P沟道场效应管 -20V -12A 代码 BEW 负载开关，PA开关
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -12A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 25mΩ@ VGS = -4.5V, ID = -5.9A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4V~-1V |
| 耗散功率PdPower Dissipation | 3.5W |
| Description & Applications | P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices |
| 描述与应用 | P沟道20-V（D-S）的MOSFET 特点 •TrenchFET®功率MOSFET •新型的热增强型PowerPAK®SC-70封装 - 小占位面积 - 低导通电阻 应用 •负载开关，PA开关，用于便携式设备的开关和电池开关 |
| 规格书PDF |
