SI5515CDC 复合场效应管 N沟道+P沟道 SOT23-8 代码 EHU
| 最大源漏极电压VdsDrain-Source Voltage | 20V/-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V/8V |
| 最大漏极电流IdDrain Current | 10A/-10A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 50mΩ@ VGS =1.8V, ID =5.1A/156mΩ@ VGS =-1.8V, ID =-2.5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.4~0.8V/-0.4~-0.8V |
| 耗散功率PdPower Dissipation | 3.1W |
| Description & Applications | N- and P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench FET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices |
| 描述与应用 | N沟道和P沟道20 V（D-S）的MOSFET 特点 •无卤素根据IEC 61249-2-21定义 •沟槽FET功率MOSFET •100％的Rg测试 •符合RoHS指令2002/95/EC 应用 •用于便携式设备的负载开关 |
| 规格书PDF |
