LBSS84LT1G P 沟道场效应管 -50V -0.13A SOT23 代码 PD
| 最大源漏极电压VdsDrain-Source Voltage | -50V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -0.13A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 5.0Ω @100mA,5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8--2.0V |
| 耗散功率PdPower Dissipation | 225mW/0.225W |
| Description & Applications | Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 Energy Efficient Miniature SOT–23 Surface Mount Package Saves Board Space |
| 描述与应用 | 功率MOSFET 130毫安，50伏 P沟道SOT-23 高效节能 微型SOT-23表面贴装封装节省电路板空间 |
| 规格书PDF |
