PH3230S n沟道增强型场效应功率晶体管 30V 100A SOT669 代码 3230s 低闸极电荷
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 100A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | VGS = 10 V; ID = 25 A RDS= 2.7~3.2 mΩ |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1~3V |
| 耗散功率Pd Power Dissipation | 62.5W |
| Description & Applications | |
| 描述与应用 |
n沟道增强型场效应功率晶体管
逻辑电平兼容
■低闸极电荷
■高密度安装
■开态电阻非常低。
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| 规格书PDF |
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