TTK101MFV-B N沟道结型场效应管 SOT723
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | |
| 漏极电流(Vgs=0V)IDSSDrain Current | |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.1V~-1.0V |
| 耗散功率PdPower Dissipation | 150mW |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel Junction Type . * For ECM . * Application for compact ECM . * thin package:0.5mm . *low capacitance: Ciss = 1.8 pF (typ.) @VDS = 2 V, VGS = 0, f = 1MHzLow noise: VN = 15 mV (typ.) @VDD=2 V, RK=1kΩ, Cg=10pF, Gv=80dB, A-Cuve Filter. |
| 描述与应用 | 东芝场效应晶体管的硅N沟道结型。 *对于ECM。 申请ECM紧凑。 *薄型封装：0.5MM。 *低电容：西斯=1.8 pF的（典型值）@ VDS=2 V，VGS=0，F =1MHzLow VN= 15毫伏（典型值）噪声： ??@ VDD= 2 V，RK=1KΩ，CG =10PF，GV =80分贝，过滤A-CUVE。 |
| 规格书PDF |
