MA4E1339E1-1068T 射频与微波介质阻挡硅中硅势垒肖特基二极管 20V 30MA VF=0.41V SOT143 代码 7G
| 反向电压Vr Reverse Voltage(Vr) |
20V |
| 平均整流电流Io Average Rectified Current(Io) |
30MA |
| 最大正向压降VF Forward Voltage(Vf) |
410MV/0.41V |
| 结电容值Cj Junction capacitance(Cj) |
1.2PF |
| 耗散功率 Pd Power Dissipation |
250MW |
| Description & Applications | Silicon Medium Barrier Schottky Diodes
• RF & Microwave Medium Barrier Silicon 20 V Schottky Diode
• Available as Single Diode, Series Pair or Unconnected Pair Configurations.
• Low Profile Surface Mount Plastic Packages
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| 描述与应用 | 中硅势垒肖特基二极管 •射频与微波介质阻挡硅20 V肖特基二极管 |
| 规格书PDF |
