| 最大源漏极电压VdsDrain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 300mA/0.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 2Ω@ VGS=4.5 V, ID=0.25 A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~2.5V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant |
| 描述与应用 | 小信号晶体管 特点 •双N沟道 •增强模式 •逻辑电平 •额定雪崩 •快速开关 •符合AEC Q101 •100％无铅，符合RoHS标准 |