| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−20V |
| 集电极连续输出电流ICCollector Current(IC) |
−150mA/-0.15A |
| 截止频率fTTranstion Frequency(fT) |
700MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
90~180 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
−200mV/-0.2V |
| 耗散功率PcPoWer Dissipation |
200mW/0.2W |
| Description & Applications |
PNP/NPN Epitaxial planar silicon transistors High-speed switching applications fast switching speed； high gain bandwidth product； low saturation voltage |
| 描述与应用 |
PNP/ NPN外延平面硅晶体管 高速开关应用 开关速度快; 高增益带宽积; 低饱和电压 |