| 最大源漏极电压VdsDrain-Source Voltage | 50v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -50v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 2.5~6ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.1~-2v |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | •Silicon N-Channel Junction FET Features small type for mounting Application General purpose voltage amplify, analog switch circuit for stereo, cassette deck, VCR |
| 描述与应用 | •硅N沟道结型场效应管 特点 小安装类型 应用 通用电压放大，模拟开关电路立体声，盒式录音机，录像机 |