| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 120V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 350~700 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors Audio frequency general purpose amplifier applications Features High voltage Excellent hFE linearity High hFE Low noise Small package Complementary to 2SA1163 |
| 描述与应用 | NPN硅外延晶体管 音频通用放大器应用 特点 高压 优秀HFE线性 高HFE 低噪音 小型封装 互补2SA1163 |