| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
25V |
| 集电极连续输出电流ICCollector Current(IC) |
2A |
| 截止频率fTTranstion Frequency(fT) |
350MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
800~1600 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
180mV/0.18V |
| 耗散功率PcPower Dissipation |
2W |
| Description & Applications |
NPN Silicon Epitaxial Transistor Power MINI Mold description the 2SD 1950 is designed for general-purpose applications requiring high DC current gain this is suitable for all kind of driving and muting featrues high DC current gain and good Hfe linearity low collector saturation voltage high Vebo：Vebo=15V |
| 描述与应用 |
NPN硅外延晶体管功率MINI模具 描述 2SD1950是专为一般用途的应用，需要高直流电流增益 这是适用于所有类型的驾驶和静音 特点 高直流增益和良好的线性HFE 低集电极饱和度电压 高Vebo：Vebo=15V |