| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流ICCollector Current(IC) | 5A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 160~320 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 90mV |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • New package with dimensions in between those of small signal and power signal package • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1578 |
| 描述与应用 | NPN硅外延晶体管 低频功率放大器和中速切换 特点 •新的封装，尺寸之间的小信号和功率信号包 •高电流电容 •低集电极饱和电压 •互补晶体管2SB1578 |