| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 280MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~500 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 160mV/0.16V |
| 耗散功率PcPower Dissipation | 800mW/0.8W |
| Description & Applications | Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair with 2SB1691 |
| 描述与应用 | NPN硅外延刨床 低频功率放大器 特点 •小型封装：MPAK（SC-59A） •大最大电流：IC=1 •低集电极到发射极饱和电压VCE（星期六）=0.3 V最大（IC / IB=0.5 A/0.05Å）。 •高功耗PC =800毫瓦（当使用氧化铝陶瓷板（25×60×0.7毫米）） •互补配对2SB1691 |