| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 30A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.03Ω/Ohm @10A,15V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 40W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features General-Purpose Switching Device Applications Low ON-resistance Low-voltage drive Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特性 通用开关设备应用 低导通电阻 低电压驱动 由于表面启用简化制造，高密度安装，并在终端产品小型 安装包 |