| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 3~7ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -2.5v |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | •Silicon N-Channel Junction FET FM TUNER, VHF RF AMPLIFIER APPLICATIONS Low Reverse Transfer Capacitance : Crss = 0.035pF(Typ.) Low Noise Figure : NF=1.7dB(Typ.) High Power Gain : Gps=28dB(Typ.) Recommend Operation Voltage : 5~15V |
| 描述与应用 | •硅N沟道结型场效应管 FM调谐器，甚高频射频放大器应用 低反向传输电容：CRSS=0.035pF（典型值） 低噪声系数：NF=1.7分贝（典型值） 高功率增益：GPS=28分贝的（典型值） 建议操作电压：5〜15V |