| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 56 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Features • Small surface mounting type • High current gain • Low collector-emitter saturation • High saturation current capability •Internal isolated NPN transistors in one package •Built in bias resistor |
| 描述与应用 | 特性 •小型表面贴装型 •高电流增益 •低集电极 - 发射极饱和 •高饱和电流能力 •内部隔离在一个封装的NPN晶体管 •内置偏置电阻 |