| 逻辑类型Logic Type | 与非门 NAND Gate |
| 电路数Number of Circuits | 4 |
| 输入数Number of Inputs | 2 |
| 电源电压VccVoltage - Supply | 2V~5.5V |
| 静态电流IqCurrent - Quiescent (Max) | 20uA |
| 输出高，低电平电流Current - Output High, Low | -24mA，24mA |
| 低逻辑电平Logic Level - Low | 0.8V |
| 高逻辑电平Logic Level - High | 2V |
| 传播延迟时间@Vcc，CLMax Propagation Delay @ V, Max CL | 3ns @ 5V，50pF |
| Description & Applications | Quad. 2-input NAND Gates；Features VCC = 2.0 V to 5.5 V All inputs VIH (Max.) = 5.5 V (@VCC = 0 V to 5.5 V) Typical VOL ground bounce < 0.8 V (@VCC = 3.3 V, Ta = 25°C) Typical VOH undershoot > 2.0 V (@VCC = 3.3 V, Ta = 25°C) High output current ±24 mA (@VCC = 3.0 V to 5.5 V) |
| 描述与应用 | 四。 2输入与非门;特性 VCC=2.0 V至5.5 V 所有输入VIH（最大）=5.5 V（VCC= 0 V至5.5 V） 典型VOL接地反弹<0.8 V（@ VCC=3.3 V，Ta=25°C） 典型VOH冲>2.0 V（VCC= 3.3 V，Ta= 25°C） 高输出电流±24毫安（@ VCC=3.0 V至5.5 V） |