| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 9V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 16GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~220 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | |
| Description & Applications | SiGe HBT type for low noise RF amplifier compaible between high breakdown voltage and high cutoff frequency low-noisy,high-gain amplification suitable for high-density mounting downsizing of the equipment for ultraminiature package 0.8mm*1.2mm |
| 描述与应用 | SiGe HBT的类型 低噪声射频放大器 compaible高击穿电压和高截止频率之间 低噪声，高增益放大 适用于高密度安装缩减了设备的超小型封装0.8MM*1.2毫米 |