| 最大源漏极电压VdsDrain-Source Voltage | 20V/-8V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V/8V |
| 最大漏极电流IdDrain Current | 910mA/-1.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.9Ω@ VGS =1.8V, ID =0.2A/46mΩ@ VGS =-2.5V, ID =-0.48A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.5V/-0.45~-1V |
| 耗散功率PdPower Dissipation | 1.1W |
| Description & Applications | Small Signal MOSFET Features • Complementary N and P Channel Device • ESD Protected Gate − ESD Rating: Class 1 • SC−88 Package for Small Footprint (2 x 2 mm) • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Applications • DC−DC Conversion • Load/Power Switching • Single or Dual Cell Li−Ion Battery Supplied Devices • Cell Phones, MP3s, Digital Cameras, PDAs |
| 描述与应用 | 小信号MOSFET 特点 •互补N和P沟道器件 •ESD保护门 - ESD等级：1级 •SC-88封装小尺寸（2×2毫米） •无铅包装可能可用。 G-后缀表示一个Pb-Free无铅封装 应用 •DC-DC转换 •负载/功率开关 •单或双电池锂离子电池提供设备 •手机，MP3音乐，数码相机，掌上电脑 |