| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 500V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 400V |
| 集电极连续输出电流ICCollector Current(IC) | 300mA/0.3A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 750mV/0.75V |
| 耗散功率PcPower Dissipation | 1.2W |
| Description & Applications | NPN high-voltage transistor FEATURES * Collector-emitter voltage: VCEO=400V(PZTA44) VCEO=350V(PZTA45) * Collector current up to 300mA & APPLICATION * Telephone switching * High voltage switch |
| 描述与应用 | NPN高电压晶体管 特性 *集电极发射极电压: VCEO = 400 v(PZTA44) VCEO = 350 v(PZTA45) *集电极电流高达300毫安 应用 *电话交换 *高电压开关 |