| 最大源漏极电压Vds Drain-Source Voltage | 200V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 250mA/0.25A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.014Ω/Ohm @200mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-3.0V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | Power MOSFET 250 mA, 200 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • Silicon Gate for Fast Switching Speeds • Low Drive Requirement • The SOT–223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. |
| 描述与应用 | 功率MOSFET 250毫安，200伏特 N沟道SOT-223 这是专为高速，低损耗电源功率MOSFET 开关应用，如开关稳压器，DC-DC转换器， 电磁阀和继电器驱动器。该器件采用SOT-223 包是专为中等功率表面贴装应用。 •硅栅快速开关速度 •低驱动要求 •SOT-223包装可以使用波或回流焊接。 所形成的线索在焊接热应力吸收 消除电路小片损坏的可能性 |