| 最大源漏极电压VdsDrain-Source Voltage | 6V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -5V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 30mA-50mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.5V -- -5V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | N-Channel GaAs MESFET.
For C to X-band Local Oscillator and Amplifier.
Features
.Ideal for use in C to X-band local oscillator and amplifier.
.The chip surface is covered with the highly reliable protection film.
.Super miniaturized plastic-mold package (CP4).
.Automatic surface mounting is available |
| 描述与应用 | 砷化镓N沟道MES场效应管 ,用于C X-波段本地振荡器和放大器, 非常适于用于C X波段的本地振荡器和放大器 ,该芯片的表面覆盖有高度可靠的保护膜, 超小型塑料模具封装（CP4）, 自动表面安装. |