| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 4A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 180~390 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200mV/0.2V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | Silicon NPN epitaxial type High-Speed Switching Applications Power Amplifier Applications features • High DC current gain: hFE = 180 to 390 (IC = 0.5A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) • High-speed switching: tf = 15 ns (typ.) |
| 描述与应用 | NPN硅外延型 高速开关应用 功率放大器应用 特点 •高直流电流增益：HFE=180〜390（IC=0.5A） •低集电极 - 发射极饱和电压VCE（饱和）=0.2 V（最大值） •高速开关：TF =15 ns |