产品描述(SIR164DP-T1-GE3 R164)
| 最大源漏极电压Vds Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
20V |
| 最大漏极电流Id Drain Current |
50A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
2.5mΩ@ VGS = 10V, ID = 15A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
1.2~2.5V |
| 耗散功率Pd Power Dissipation |
6.9W |
| Description & Applications |
N-ChAPPLICATIONS • DC/DC • Notebook CPU Coreannel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • New MOSFET Technology Optimized for Ringing Reduction in Switching Application • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC • Notebook CPU Core |
| 描述与应用 |
N-ChAPPLICATIONS的 •DC / DC •笔记本电脑CPU Coreannel的30-V（D-S）的MOSFET 特点 •根据IEC 61249-2-21的无卤素 定义 •第三代TrenchFET®功率MOSFET •新的MOSFET技术优化 振铃减少开关应用 •100％的Rg和UIS测试 •符合RoHS指 |
产品描述(SSM3K35MFV K2)
| 最大源漏极电压VdsDrain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage |
10V |
| 最大漏极电流IdDrain Current |
-180mA/-0.18A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance |
1.5Ω @-50mA,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage |
0.4-1.0V |
| 耗散功率PdPower Dissipation |
150mW/0.15W |
| Description & Applications |
High-Speed Switching Applications Analog Switch Applications • 1.2 V drive • Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V) Ron = 8 Ω (max) (@VGS = 1.5 V) Ron = 4 Ω (max) (@VGS = 2.5 V) Ron = 3 Ω (max) (@VGS = 4.0 V) |
| 描述与应用 |
高速开关应用 模拟开关应用 •1.2 V驱动器 •低导通电阻：RON =20Ω（最大值）（@ VGS= 1.2 V） RON =8Ω（最大）（@ VGS=1.5 V） RON =4Ω（最大）（@ VGS=2.5 V） RON =3Ω（最大）（@ VGS=4.0 V） |
