| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) |
50 |
| 截止频率fT Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc Power Dissipation |
0.1W/100mW |
| Description & Applications |
Features • Transistor Silicon PNP Epitaxial Type (PCT Process) • Built-in bias resistors • Simplified circuit design • Fewer parts and simplified manufacturing process • Complementary to RN1101~RN1106 Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 •晶体管的硅PNP外延型（PCT工艺） •内置偏置电阻 •简化电路设计更少的部件和简化制造工艺 •互补RN1101~~ RN1106 应用 •开关，逆变电路，接口电路和驱动器电路应用 |
