2SA1603A PNP三极管 -60V -150mA/-0.15A 200MHz 180~390 -300mV/-0.3V SOT-323/SC-70 marking/标记 TR 低频放大
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流ICCollector Current(IC) | −150mA/-0.15A |
截止频率fTTranstion Frequency(fT) | 200MHz |
直流电流增益hFEDC Current Gain(hFE) | 180~390 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | -300mV/-0.3V |
耗散功率PcPoWer Dissipation | 200mW/0.2W |
Description & Applications | FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. |
描述与应用 | 对于低频放大应用 硅PNP外延型 特点 ●小集电极到发射极饱和电压。 VCE(sat)=-0.3V最大 ●直流前锋出色的线性度获得。 ●超小型封装,便于安装 应用 对于混合集成电路,小型机低频电压放大应用 |
规格书PDF |