2SA1728-4 PNP三极管 -50V -500mA/-0.5A 350MHz 100~200 -200mV/-0.2V SOT-23/CP marking/标记 DS4 高速开关
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
截止频率fTTranstion Frequency(fT) | 350MHz |
直流电流增益hFEDC Current Gain(hFE) | 100~200 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | −200mV/-0.2V |
耗散功率PcPoWer Dissipation | 200mW/0.2W |
Description & Applications | PNP Epitaxial planar silicon transistor High-speed switching applications adoption of FBET process; low collector-to-emitter saturation voltage; fast switching speed |
描述与应用 | PNP外延平面硅晶体管 高速开关应用 采纳的FBET过程; 低集电极 - 发射极饱和电压; 开关速度快 |
规格书PDF |