2SB806 PNP三极管 -120V -700mA/-0.7A 75MHz 200~400 -400mV/-0.4V SOT-89/SC-62 marking/标记 KP 高集电极发射极电压
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -120V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -120V |
| 集电极连续输出电流ICCollector Current(IC) | -700mA/-0.7A |
| 截止频率fTTranstion Frequency(fT) | 75MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP silicon epitaxial transistor power mini mold high collector to emitter complementary to 2SD1006 and 2SD1007 |
| 描述与应用 | PNP硅外延晶体管电源小型模具 高集电极到发射极电压; 互补2SD1006 2SD1007 |
| 规格书PDF |
