2SB815B6 PNP三极管 -20V -700mA/-0.7A 250MHz 200~400 -60mV SOT-23/CP marking/标记 B6 大电流/低饱和电压
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | -700mA/-0.7A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -60mV |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | silicon (PNP/NPN) Epitaxial planar transistors large current capacity and low saturation voltage |
| 描述与应用 | 硅（PNP/ NPN）外延平面晶体管 大电流能力和低饱和电压 |
| 规格书PDF |
